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Proceedings Paper

A cleaning method for reduced graphene oxide by inductively coupled plasma
Author(s): Yan Shen; Peng Zhou; David Wei Zhang
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Paper Abstract

In this work, we make reduced graphene oxide (rGO) solution via chemical way and use it to fabricate Field-effect transistor (FET) channel by spin coating for investigating the performance of grapheme-based devices. An inductively coupled plasma (ICP) with very low plasma density is applied to etch the surface of rGO. It has been confirmed that residues and contaminations can be removed through etching and proper etching parameters can lead to better electrical properties more like the pristine graphene without creating defects. Considering the application of graphene added to silicon-based electronic devices, such a cleaning method can be used due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.

Paper Details

Date Published: 12 October 2016
PDF: 5 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180P (12 October 2016); doi: 10.1117/12.2246592
Show Author Affiliations
Yan Shen, Fudan Univ. (China)
Shanghai Institute of Process Automation and Instrumentation (China)
Peng Zhou, Fudan Univ. (China)
David Wei Zhang, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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