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Proceedings Paper

The performance study of oxide by-passed(OB) lateral double diffused MOSFET
Author(s): Pan-pan Tang
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Paper Abstract

An SOI LDMOS device structure with Oxide By-passed(OB) was investigated and its breakdown mechanism and characteristic of structure was analyzed. Its performance was verified by 3D numerical simulation with SILVACO TCAD software. The simulated results show that the electrical field element of the device is modulated by the concept of similar Superjunction(SJ) structure. Compared with the SJ LDMOS device, OB LDMOS obtains the same breakdown voltage, simultaneously the specific on-resistance of the OB LDMOS reduces from 3.81mΩ·cm2 to 1.96mΩ·cm2, except for achieving comparable performance and overcoming the high aspect ratio of fabrication structure and the difficulty of accurate concentration match of SJ LDMOS.

Paper Details

Date Published: 19 October 2016
PDF: 5 pages
Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 101520P (19 October 2016); doi: 10.1117/12.2246492
Show Author Affiliations
Pan-pan Tang, Harbin Engineering Univ. (China)

Published in SPIE Proceedings Vol. 10152:
High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration
Lijun Wang; Zhiping Zhou, Editor(s)

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