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Proceedings Paper

Molecular dynamics study on the thermal conductivity of multiple layers in semiconductor disk laser
Author(s): Peng Zhang; Renjiang Zhu; Maohua Jiang; Yanrong Song; Dingke Zhang; Yuting Cui
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Paper Abstract

Thermal properties of multiple layers including distributed Bragg reflector (DBR) and multiple quantum wells (MQWs) used in the semiconductor gain element are crucial for the performance of a semiconductor disk laser (SDL). For the purpose of more reasonable semiconductor wafer design, so to improve the thermal management of SDLs, accurate thermal conductivity value of a DBR is under considerable requirement. By the use of equilibrium molecular dynamics (EMD) method, thermal conductivities of AlAs/GaAs DBRs, which were widely employed in 1μm wavelength SDLs, were calculated, and simulated results were compared with reported data. Influences of the Al composition, and the layer thickness on the thermal conductivities were focused and analyzed.

Paper Details

Date Published: 9 November 2016
PDF: 8 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 1001714 (9 November 2016); doi: 10.1117/12.2246206
Show Author Affiliations
Peng Zhang, Chongqing Normal Univ. (China)
Renjiang Zhu, Chongqing Normal Univ. (China)
Maohua Jiang, Chongqing Normal Univ. (China)
Yanrong Song, Beijing Univ. of Technology (China)
Dingke Zhang, Chongqing Normal Univ. (China)
Yuting Cui, Chongqing Normal Univ. (China)

Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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