An In_0.66Ga_0.34As_0.73P_0.27/In_0.89Ga_0.11As_0.23P_0.77 quantum-well laser structure was grown on an InP substrate. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by double crystal X-ray diffraction and room-temperature photoluminescence spectra. It shows that the active region’s optical properties are comparable to that InGaAs/InGaAsP quantum-well lasers. Meanwhile, we fabricated an InP-based InGaAsP/InGaAsP multiple quantum wells (MQWs) laser at 1.3 μm wavelength. Under quasi-continuous wave condition, a threshold current of 400 mA and the single side slope efficiency of 0.18 mW/mA are achieved for a broad area device with 100 μm-wide strip and 500 μm-long cavity at room-temperature. The wavelength of emission spectrum is 1305 nm. When the injection current is 700 mA, FWHM of the envelope is 3.6 nm.

Date Published: 9 November 2016
PDF: 5 pages
Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170L (9 November 2016); doi: 10.1117/12.2245987

Published in SPIE Proceedings Vol. 10017:
Semiconductor Lasers and Applications VII
Ninghua Zhu; Werner H. Hofmann, Editor(s)