Proceedings Paper
Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma| Format | Member Price | Non-Member Price |
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Paper Abstract
Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.
Paper Details
Date Published: 12 October 2016
PDF: 4 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180M (12 October 2016); doi: 10.1117/12.2245726
Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)
PDF: 4 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180M (12 October 2016); doi: 10.1117/12.2245726
Show Author Affiliations
Lanlan Shen, Shanghai Institute of Microsystem and Information Technology (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Le Li, Shanghai Institute of Microsystem and Information Technology (China)
Tianqi Guo, Shanghai Institute of Microsystem and Information Technology (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Le Li, Shanghai Institute of Microsystem and Information Technology (China)
Tianqi Guo, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Yan Cheng, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Yan Cheng, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)
Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)
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