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Proceedings Paper

High-frequency pulsed laser response of a PIN InGaAs photodetector
Author(s): J. W. Lambrechts
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Paper Abstract

In this work, the frequency response of a single-element, direct band gap indium gallium arsenide (In0.53Ga0.47As) infrared photo-detector on a lattice matched indium phosphide (InP) substrate is investigated by varying the intrinsic layer doping concentration. The intrinsic device operation and transport physics are theoretically determined and simulated. The epitaxial layer structure, physical dimensions, doping profiles and carrier concentrations are modelled for a complete PIN photodetector with cut-off wavelength of 1680 nm at 295 K. The calculated and simulated device performance parameters are based on the responsivity, quantum efficiency, dark-current in reverse-biased operation, frequency bandwidth and intrinsic junction capacitance. These parameters are also measured and the frequency response is determined by a low-power 1064 nm neodymium-doped yttrium aluminium garnet (Nd:YAG) pulsed laser at the output of a high-gain transimpedance amplifier. The shortest measurable pulse rise-time for this configuration is 12.4 ns. The dark-current, frequency response and intrinsic junction capacitance results are used to represent the equivalent circuit model of the photodetector at the input of the transimpedance amplifier. The primary goal is to identify the variations in performance based on the intrinsic layer composition, manufacturing considerations and epitaxial enhancements to improve the bandwidth of such a device.

Paper Details

Date Published: 3 February 2017
PDF: 9 pages
Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 100360Z (3 February 2017); doi: 10.1117/12.2245412
Show Author Affiliations
J. W. Lambrechts, Denel Dynamics (South Africa)

Published in SPIE Proceedings Vol. 10036:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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