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Proceedings Paper

Low-pressure CVD for wide-area diamond film deposition at low temperatures
Author(s): Akio Hiraki; Hiroshi Kawarada; Jin Wei; Jing Sheng Ma; Junichi Suzuki
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Paper Abstract

We have applied magneto-microwave plasma to be successful for the first time in deposition of diamond at far lower pressure than the conventional high pressure plasma CVD. The important point of the low pressure plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2. 45 GHz microwave) at the deposition area. The high density plasma ( above '' '' /cm3 ) necessary for high quality diamond formation has been obtained by the effective microwave absorption near the magnetic field satisfying the ECR condition. The plasma is quite uniform at the discharge area (160 mm in diameter) and uniform diamond films with high quality have been obtained. From the investigation of diamond formation from 50 Torr to lO2 Torr in the same deposition system it is definite that the lower pressure lowers the formation temperature of diamond to 500C and the effective species for diamond formation are low energy radicals. 1.

Paper Details

Date Published: 1 December 1990
PDF: 8 pages
Proc. SPIE 1325, Diamond Optics III, (1 December 1990); doi: 10.1117/12.22444
Show Author Affiliations
Akio Hiraki, Osaka Univ. (Japan)
Hiroshi Kawarada, Osaka Univ. (Japan)
Jin Wei, Osaka Univ. (Japan)
Jing Sheng Ma, Osaka Univ. (Japan)
Junichi Suzuki, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 1325:
Diamond Optics III
Albert Feldman; Sandor Holly, Editor(s)

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