The eco-conscious lithography processes of using pure water instead of spin coating organic solvent and alkaline developer were described for extreme-ultraviolet and electron beam techniques of advanced photomask manufactural application. Natural polysaccharide was obtained by the esterification of the hydroxyl groups of the polysaccharide resulting in improved resolution and resist profiles after the purewater developing processes. The 100, 200, and, 300 nm line and space width, and straight profiles of polysaccharide-based resist material on hardmask underlayer were resolved at the doses of 30 μC/cm2. In addition to the superior resolution in the pure-water developing processes, the resist material containing the polysaccharide derivatives for these lithography showed good resist profiles and step filling performance on substrates.

Date Published: 5 October 2016
PDF: 7 pages
Proc. SPIE 9985, Photomask Technology 2016, 99852B (5 October 2016); doi: 10.1117/12.2243399

Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)