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Proceedings Paper

Complementary field-effect transistors for flexible electronics
Author(s): Ulrich Hilleringmann; Fábio F. Vidor; Thorsten Meyers
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Paper Abstract

Key issues for flexible complementary electronics are low temperature processing, sufficient performance of the integrated p- and n-type FET devices, and cheap semiconducting and dielectric materials. Organic semiconductors commonly depict p-type behavior, whereas metal oxide semiconductors show n-type characteristics. This paper presents a new approach for common integration of organic and ZnO transistors on transparent substrates for complementary transistor electronics. The gate dielectric consists of a special high-k resin, the metallization utilizes Au and Al films. The thermal budget for processing of the devices is limited to 120°C to enable foil substrates.

Paper Details

Date Published: 3 February 2017
PDF: 6 pages
Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 100360K (3 February 2017); doi: 10.1117/12.2243001
Show Author Affiliations
Ulrich Hilleringmann, Univ. Paderborn (Germany)
Fábio F. Vidor, Univ. Paderborn (Germany)
Thorsten Meyers, Univ. Paderborn (Germany)

Published in SPIE Proceedings Vol. 10036:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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