In this study, we examine exposure characteristics of a positive tone electron beam resist consisting of methyl α- chloroacrylate and α-methylstyrene by changing the development process conditions. 25/25 nm and 30/30 nm line-andspace (L/S) patterns (design value) are developed in amyl and heptyl acetates. The resist patterns developed at 0ºC for 120 s show the better shapes having the vertical sidewalls than those developed at 22 °C for 60 s. The dose margins of pattern formation for 0°C development become wider, although the sensitivities are lower. The effect of post exposure baking (PEB) on exposure characteristics is also investigated. Adding PEB process performed at 120°C for 2 min, the dose margin also becomes wider although the sensitivity is lower. 20/20 nm L/S patterns are fabricated by using PEB and/or 0°C development. Though the required exposure dose is larger, the resist pattern is improved by PEB and/or 0°C development. The formation of 35 nm pitch pattern is also presented.

Date Published: 4 October 2016
PDF: 7 pages
Proc. SPIE 9985, Photomask Technology 2016, 99851L (4 October 2016);

Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)