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Proceedings Paper

Investigation of fabrication process for sub 20-nm dense pattern of non-chemically amplified electron beam resist based on acrylic polymers
Author(s): Shunsuke Ochiai; Tomohiro Takayama; Yukiko Kishimura; Hironori Asada; Manae Sonoda; Minako Iwakuma; Ryoichi Hoshino
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Paper Abstract

In this study, we examine exposure characteristics of a positive tone electron beam resist consisting of methyl α- chloroacrylate and α-methylstyrene by changing the development process conditions. 25/25 nm and 30/30 nm line-andspace (L/S) patterns (design value) are developed in amyl and heptyl acetates. The resist patterns developed at 0ºC for 120 s show the better shapes having the vertical sidewalls than those developed at 22 °C for 60 s. The dose margins of pattern formation for 0°C development become wider, although the sensitivities are lower. The effect of post exposure baking (PEB) on exposure characteristics is also investigated. Adding PEB process performed at 120°C for 2 min, the dose margin also becomes wider although the sensitivity is lower. 20/20 nm L/S patterns are fabricated by using PEB and/or 0°C development. Though the required exposure dose is larger, the resist pattern is improved by PEB and/or 0°C development. The formation of 35 nm pitch pattern is also presented.

Paper Details

Date Published: 4 October 2016
PDF: 7 pages
Proc. SPIE 9985, Photomask Technology 2016, 99851L (4 October 2016); doi: 10.1117/12.2242986
Show Author Affiliations
Shunsuke Ochiai, Yamaguchi Univ. (Japan)
Tomohiro Takayama, Yamaguchi Univ. (Japan)
Yukiko Kishimura, Yamaguchi Univ. (Japan)
Hironori Asada, Yamaguchi Univ. (Japan)
Manae Sonoda, National Institute of Technology (Japan)
Minako Iwakuma, National Institute of Technology (Japan)
Ryoichi Hoshino, Gluon Lab. LLC (Japan)

Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)

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