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Proceedings Paper

Lithographic performance of a new “low-k” mask
Author(s): Takashi Adachi; Ayako Tani; Yukihiro Fujimura; Katsuya Hayano; Yasutaka Morikawa; Hiroyuki Miyashita; Yukio Inazuki; Yoshio Kawai
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Paper Abstract

We have been researching new mask blank materials for the next generation lithography (NGL) and developed a new mask blank with low-k phase shifter [1] [2]. The low-k phase shifter consists of only Si and N. In our previous work, we reported the advantages of developed SiN phase shift mask (PSM) [2]. It showed high lithographic performance and high durability against ArF excimer laser as well as against cleaning. In this report, we further verified its high lithographic performance on several types of device pattern. The SiN PSM had high lithographic performance compared with conventional 6% MoSi PSM. Exposure latitude (EL) and mask enhancement factor (MEEF) were especially improved on originally designed Gate, Metal and Via patterns.

Paper Details

Date Published: 10 May 2016
PDF: 6 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998404 (10 May 2016); doi: 10.1117/12.2242870
Show Author Affiliations
Takashi Adachi, Dai Nippon Printing Co., Ltd. (Japan)
Ayako Tani, Dai Nippon Printing Co., Ltd. (Japan)
Yukihiro Fujimura, Dai Nippon Printing Co., Ltd. (Japan)
Katsuya Hayano, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Miyashita, Dai Nippon Printing Co., Ltd. (Japan)
Yukio Inazuki, Shin-Etsu Chemical Co., Ltd. (Japan)
Yoshio Kawai, Shin-Etsu Chemical Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)

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