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Improved hybrid polymer/PbS quantum dot infrared phototransistors incorporating single-layer graphene
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Paper Abstract

The optical responsivity of bulk-heterojunction field effect phototransistors (BH-FEpTs) based on poly [2-methoxy-5-(2´- ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV) and PbS quantum dot hybrids is very low. A main reason for the low responsivity is the low carrier mobility of the blends. To overcome the shortcoming, graphene with high carrier mobility (~200,000 cm2V-1s-1) can be used for improving the responsivity of BH-FEpTs. However, the influence of monolayer graphene on the photo response of BH-FEpTs still has been not studied. In this papers, BH-FEpTs and GBH-FEpTs (single layer graphene beneath the BH layer in BH-FEpTs) were fabricated. Experimentally, the GBH-FEpTs showed ultrahigh mobility for both holes and electrons (μH and μE) of 183 and 169 cm2V−1s−1, while 11.3 and 6.2 cm2V−1s−1 in BH-FEpT. Due to the greatly promoted carrier mobility and highly ordered channels for GBH-FEpTs, higher α, μ and β are obtained for GBH-FEpTs. The responsivity of GBH-FEpTs is improved to 101 A/W, which is two orders magnitude larger than BH-FEpTs (10-1 A/W).

Paper Details

Date Published: 31 October 2016
PDF: 11 pages
Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 100190S (31 October 2016); doi: 10.1117/12.2242775
Show Author Affiliations
Xiaoxian Song, Tianjin Univ. (China)
Yating Zhang, Tianjin Univ. (China)
Haiting Zhang, Tianjin Univ. (China)
Yu Yu, Tianjin Univ. (China)
Mingxuan Cao, Tianjin Univ. (China)
Yongli Che, Tianjin Univ. (China)
Jianlong Wang, Tianjin Univ. (China)
Xin Ding, Tianjin Univ. (China)
Jianquan Yao, Tianjin Univ. (China)

Published in SPIE Proceedings Vol. 10019:
Optoelectronic Devices and Integration VI
Xuping Zhang; Baojun Li; Changyuan Yu, Editor(s)

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