
Proceedings Paper
The study on quantifiable analysis for complex OPCed patterns based on Mask CD SEM contour informationFormat | Member Price | Non-Member Price |
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Paper Abstract
As the design rule becomes continuously smaller, the Hard OPC is being applied to pattern design in semiconductor
production. Controllability of hard OPCed pattern’s quality directly affects to the performance of the device and yields of
production. Critical Dimension Scanning Electron Microscopy (CD-SEM) is used to accurately confirm the Critical
Dimension (CD) quality of the photomask. CD-SEM makes the pattern’s shape image by using secondary electrons
information directly from the Mask surface and can measure CD values. Classically the purpose of CD-SEM
measurement was to get one dimensional CD values. However it is difficult to guarantee complex hard OPCed pattern’s
quality by using only one dimensional CD values because complexity of pattern design has been increased.
To confirm and control the quality of hard OPCed pattern, the quality of pattern fidelity must be measured
quantitatively. In order to overcome this difficulty we developed a new method to quantitatively evaluate the quality of
pattern fidelity using EPE (Edge Placement Error) distance from the overlay between Target Design GDS and SEM GDS
contour which is extracted from CD-SEM image. This paper represents how to define and analyze quantitatively the
quality of complex hard OPCed pattern.
Paper Details
Date Published: 10 May 2016
PDF: 13 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998407 (10 May 2016); doi: 10.1117/12.2242496
Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)
PDF: 13 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998407 (10 May 2016); doi: 10.1117/12.2242496
Show Author Affiliations
Won Joo Park, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Hyung-Joo Lee, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Yoon Taek Han, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Seuk Hwan Choi, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Hak Seung Han, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Dong Hoon Chung, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Hyung-Joo Lee, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Yoon Taek Han, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Seuk Hwan Choi, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Hak Seung Han, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Dong Hoon Chung, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG ELECTRONICS Co., Ltd. (Korea, Republic of)
Yoshiaki Ogiso, Advantest Corp. (Japan)
Soichi Shida, Advantest Corp. (Japan)
Jun Matsumoto, Advantest Corp. (Japan)
Takayuki Nakamura, Advantest Corp. (Japan)
Yoshiaki Ogiso, Advantest Corp. (Japan)
Soichi Shida, Advantest Corp. (Japan)
Jun Matsumoto, Advantest Corp. (Japan)
Takayuki Nakamura, Advantest Corp. (Japan)
Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)
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