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Proceedings Paper

Registration performance on EUV masks using high-resolution registration metrology
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Paper Abstract

Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

Paper Details

Date Published: 5 October 2016
PDF: 8 pages
Proc. SPIE 9985, Photomask Technology 2016, 99851W (5 October 2016); doi: 10.1117/12.2241498
Show Author Affiliations
Steffen Steinert, Carl Zeiss SMT GmbH (Germany)
Hans-Michael Solowan, Carl Zeiss SMT GmbH (Germany)
Jinback Park, SAMSUNG Electronics Co., Ltd. (Korea, Democratic Peoples Republic of)
Hakseung Han, SAMSUNG Electronics Co., Ltd. (Korea, Democratic Peoples Republic of)
Dirk Beyer, Carl Zeiss SMT GmbH (Germany)
Thomas Scherübl, Carl Zeiss SMT GmbH (Germany)

Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)

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