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Proceedings Paper

Development of a new high transmission phase shift mask technology for 10 nm logic node
Author(s): Thomas Faure; Yoshifumi Sakamoto; Yusuke Toda; Karen Badger; Kazunori Seki; Mark Lawliss; Takeshi Isogawa; Amy Zweber; Masayuki Kagawa; Richard Wistrom; Yongan Xu; Granger Lobb; Ramya Viswanathan; Lin Hu; Yukio Inazuki; Kazuhiro Nishikawa
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Paper Abstract

In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole patterning by reducing the MEEF and improving the depth of focus (DOF). First, the simulated MEEF and DOF data will be compared between the 6% and high T PSM masks with the transmission of high T mask blank varying from 12% to 20%. This resulted in selection of a 12% transmission phase shift mask. As part of this work a new 12% attenuated phase shift mask blank was developed. A detailed description and results of the key performance metrics of the new mask blank including radiation durability, dry etch properties, film thickness, defect repair, and defect inspection will be shared. In addition, typical mask critical dimension uniformity and mask minimum feature size performance for 10 nm logic node via level mask patterns will be shown. Furthermore, the results of work to optimize the chrome hard mask film properties to meet the final mask minimum feature size requirements will be shared. Lastly, the key results of detailed lithographic performance comparisons of the process of record 6% and new 12% phase shift masks on wafer will be described. The 12% High T blank shows significantly better MEEF and larger DOF than those of 6% PSM mask blank, which is consistent with our simulation data.

Paper Details

Date Published: 10 May 2016
PDF: 13 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998402 (10 May 2016); doi: 10.1117/12.2241480
Show Author Affiliations
Thomas Faure, GLOBALFOUNDRIES Inc. (United States)
Yoshifumi Sakamoto, Toppan Photomasks Inc. (United States)
Yusuke Toda, Toppan Photomasks Inc. (United States)
Karen Badger, GLOBALFOUNDRIES Inc. (United States)
Kazunori Seki, Toppan Photomasks Inc. (United States)
Mark Lawliss, GLOBALFOUNDRIES Inc. (United States)
Takeshi Isogawa, Toppan Photomasks Inc. (United States)
Amy Zweber, GLOBALFOUNDRIES Inc. (United States)
Masayuki Kagawa, Toppan Photomasks Inc. (United States)
Richard Wistrom, GLOBALFOUNDRIES Inc. (United States)
Yongan Xu, IBM Corp. (United States)
Granger Lobb, GLOBALFOUNDRIES Inc. (United States)
Ramya Viswanathan, GLOBALFOUNDRIES Inc. (United States)
Lin Hu, GLOBALFOUNDRIES Inc. (United States)
Yukio Inazuki, Shin-Etsu Chemical Co., Ltd. (Japan)
Kazuhiro Nishikawa, Shin-Etsu Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)

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