
Proceedings Paper
The study of CD side to side error in line/space pattern caused by post-exposure bake effectFormat | Member Price | Non-Member Price |
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Paper Abstract
In semiconductor manufacturing, as the design rule has decreased, the ITRS roadmap requires crucial
tighter critical dimension (CD) control. CD uniformity is one of the necessary parameters to assure good
performance and reliable functionality of any integrated circuit (IC) [1] [2], and towards the advanced
technology nodes, it is a challenge to control CD uniformity well.
The study of corresponding CD Uniformity by tuning Post-Exposure bake (PEB) and develop process
has some significant progress[3], but CD side to side error happening to some line/space pattern are still
found in practical application, and the error has approached to over the uniformity tolerance. After details
analysis, even though use several developer types, the CD side to side error has not been found
significant relationship to the developing. In addition, it is impossible to correct the CD side to side error
by electron beam correction as such error does not appear in all Line/Space pattern masks. In this paper
the root cause of CD side to side error is analyzed and the PEB module process are optimized as a main
factor for improvement of CD side to side error.
Paper Details
Date Published: 5 October 2016
PDF: 8 pages
Proc. SPIE 9985, Photomask Technology 2016, 99851N (5 October 2016); doi: 10.1117/12.2241277
Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)
PDF: 8 pages
Proc. SPIE 9985, Photomask Technology 2016, 99851N (5 October 2016); doi: 10.1117/12.2241277
Show Author Affiliations
Jin Huang, Semiconductor Manufacturing International Corp. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Haiming Ge, Semiconductor Manufacturing International Corp. (China)
Max Lu, Semiconductor Manufacturing International Corp. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Haiming Ge, Semiconductor Manufacturing International Corp. (China)
Max Lu, Semiconductor Manufacturing International Corp. (China)
Yijun Wu, Semiconductor Manufacturing International Corp. (China)
Mingjing Tian, Semiconductor Manufacturing International Corp. (China)
Shichuan Yan, Semiconductor Manufacturing International Corp. (China)
Ran Wang, Semiconductor Manufacturing International Corp. (China)
Mingjing Tian, Semiconductor Manufacturing International Corp. (China)
Shichuan Yan, Semiconductor Manufacturing International Corp. (China)
Ran Wang, Semiconductor Manufacturing International Corp. (China)
Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)
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