In our prior research we investigated room-temperature radiation detectors (CZT, CMT, CdMgTe, CTS, among other compound semiconductors) for point defects related to different dopants and impurities. In this talk we will report on our most recent research on newly grown CZT crystals doped with In, In+Al, In+Ni, and In+Sn. The main focus will be on the study of dopant-induced point defects using deep-level current transient spectroscopy (i-DLTS). In addition the performance,  product, gamma-ray spectral response and internal electric field of the detectors were measured and correlated with the dopant-induced point defects and their concentrations. Characterization of the detectors was carried out using i-DLTS for the point defects, Pockels effect for the internal electric-field distribution, and -ray spectroscopy for the spectral properties.

Date Published: 2 November 2016
PDF: 1 pages
Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 996818 (2 November 2016); doi: 10.1117/12.2240331

Published in SPIE Proceedings Vol. 9968:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII
Ralph B. James; Michael Fiederle; Arnold Burger; Larry Franks, Editor(s)