The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO₂ substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm²/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 10⁵. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

Date Published: 23 September 2016
PDF: 9 pages
Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430H (23 September 2016); doi: 10.1117/12.2238792

Published in SPIE Proceedings Vol. 9943:
Organic Field-Effect Transistors XV
Iain McCulloch; Oana D. Jurchescu, Editor(s)