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Proceedings Paper

Understanding and eliminating non-radiative decay in organic-inorganic perovskites (Conference Presentation)
Author(s): Samuel D. Stranks; Dane de Quilettes

Paper Abstract

Organic-inorganic perovskites such as CH3NH3PbI3 are highly promising materials for a variety of optoelectronic applications, with certified power conversion efficiencies in solar cells already exceeding 21% and promising applications in light-emitting diodes, lasers and photodetectors also emerging. A key enabling property of the perovskites is their high photoluminescence quantum efficiency, suggesting that these materials could in principle approach the thermodynamic device efficiency limits in which all recombination is radiative. However, non-radiative recombination sites are present which vary heterogeneously from grain to grain and limit device performance. Here, I will present results where we probe the local photophysics of neat CH3NH3PbI3 perovskite films using confocal photoluminescence (PL) measurements and correlate the observations with the local chemistry of the grains using energy-dispersive X-ray spectroscopy (EDX) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). We investigate the connection between grains that are bright or dark in emission and the local Pb:I ratios at the surface and through the grains. We also examine how the photophysics, local chemistry and non-radiative decay pathways change slowly over time under illumination. Our results reveal a “photo-induced cleaning” arising from a redistribution of iodide content in the films, giving strong evidence for photo-induced ion migration. These slow transient effects appear to be related to anomalous hysteresis phenomena observed in full solar cells. I will discuss how immobilizing ions, reducing trap densities and achieving homogenous stoichiometries could suppress hysteresis effects and lead to devices approaching the efficiency limits.

Paper Details

Date Published: 11 November 2016
PDF: 1 pages
Proc. SPIE 9923, Physical Chemistry of Interfaces and Nanomaterials XV, 99231D (11 November 2016); doi: 10.1117/12.2238390
Show Author Affiliations
Samuel D. Stranks, Massachusetts Institute of Technology (United States)
Univ. of Cambridge (United Kingdom)
Dane de Quilettes, Univ. of Washington (United States)

Published in SPIE Proceedings Vol. 9923:
Physical Chemistry of Interfaces and Nanomaterials XV
Artem A. Bakulin; Robert Lovrincic; Natalie Banerji, Editor(s)

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