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Proceedings Paper

Highly stable organic field-effect transistors with engineered gate dielectrics (Conference Presentation)
Author(s): Bernard Kippelen; Cheng-Yin Wang; Canek Fuentes-Hernandez; Minseong Yun; Ankit K. Singh; Amir Dindar; Sangmoo Choi; Samuel Graham

Paper Abstract

Organic field-effect transistors (OFETs) have the potential to lead to low-cost flexible displays, wearable electronics, and sensors. While recent efforts have focused greatly on improving the maximum charge mobility that can be achieved in such devices, studies about the stability and reliability of such high performance devices are relatively scarce. In this talk, we will discuss the results of recent studies aimed at improving the stability of OFETs under operation and their shelf lifetime. In particular, we will focus on device architectures where the gate dielectric is engineered to act simultaneously as an environmental barrier layer. In the past, our group had demonstrated solution-processed top-gate OFETs using TIPS-pentacene and PTAA blends as a semiconductor layer with a bilayer gate dielectric layer of CYTOP/Al2O3, where the oxide layer was fabricated by atomic layer deposition, ALD. Such devices displayed high operational stability with little degradation after 20,000 on/off scan cycles or continuous operation (24 h), and high environmental stability when kept in air for more than 2 years, with unchanged carrier mobility. Using this stable device geometry, simple circuits and sensors operating in aqueous conditions were demonstrated. However, the Al2O3 layer was found to degrade due to corrosion under prolonged exposure in aqueous solutions. In this talk, we will report on the use of a nanolaminate (NL) composed of Al2O3 and HfO2 by ALD to replace the Al2O3 single layer in the bilayer gate dielectric use in top-gate OFETs. Such OFETs were found to operate under harsh condition such as immersion in water at 95 °C. This work was funded by the Department of Energy (DOE) through the Bay Area Photovoltaics Consortium (BAPVC) under Award Number DE-EE0004946.

Paper Details

Date Published: 2 November 2016
PDF: 1 pages
Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430G (2 November 2016); doi: 10.1117/12.2238237
Show Author Affiliations
Bernard Kippelen, Georgia Institute of Technology (United States)
Cheng-Yin Wang, Georgia Institute of Technology (United States)
Canek Fuentes-Hernandez, Georgia Institute of Technology (United States)
Minseong Yun, Georgia Institute of Technology (United States)
Ankit K. Singh, Georgia Institute of Technology (United States)
Amir Dindar, Georgia Institute of Technology (United States)
Sangmoo Choi, Georgia Institute of Technology (United States)
Samuel Graham, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 9943:
Organic Field-Effect Transistors XV
Iain McCulloch; Oana D. Jurchescu, Editor(s)

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