
Proceedings Paper
Switching performance and efficiency investigation of GaN based DC-DC Buck converter for low voltage and high current applicationsFormat | Member Price | Non-Member Price |
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Paper Abstract
The Wide band-gap (WBG) materials “such as Silicon Carbide (SiC) and Gallium nitride (GaN)” based power switching
devices provide higher performance capabilities compared to Si-based power switching devices. The wide band-gap
materials based power switching devices outperform Si-based devices in many performance characteristics such as: low
witching loss, low conduction loss, high switching frequencies, and high operation temperature. GaN based switching
devices benefit a lot of applications such as: future electric vehicles and solar power inverters. In this paper, a DC-DC
Buck converter based on GaN FET for low voltage and high current applications is designed and investigated. The
converter is designed for stepping down a voltage of 48V to 12V with high switching frequency. The capability of the
GaN FET based buck converter is studied and compared to equivalent SiC MOSFET and Si-based MOSFET buck
converters. The analysis of switching losses and efficiency was performed to compare the performance capabilities of
GaN FET, SiC MOSFET and Si-based MOSFET. The results showed that the overall switching losses of GaN FET are
lower than that of SiC and Si-based power switching devices. Also, the performance capability of GaN devices with
higher frequencies is studied. GaN devices with high frequencies will reduce the total size and the cost of the power
converter. In Addition, the overall efficiency of the DC-DC Buck converter is higher with the GaN FET switching
devices, which make it more suitable for low voltage and high current applications.
Paper Details
Date Published: 19 September 2016
PDF: 9 pages
Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 99570C (19 September 2016); doi: 10.1117/12.2238142
Published in SPIE Proceedings Vol. 9957:
Wide Bandgap Power Devices and Applications
Mohammad Matin; Abdul A. S. Awwal; Achyut K. Dutta, Editor(s)
PDF: 9 pages
Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 99570C (19 September 2016); doi: 10.1117/12.2238142
Show Author Affiliations
Mohammad Matin, Univ. of Denver (United States)
Published in SPIE Proceedings Vol. 9957:
Wide Bandgap Power Devices and Applications
Mohammad Matin; Abdul A. S. Awwal; Achyut K. Dutta, Editor(s)
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