We analyze the terahertz properties of complex oxide hetero-structures with record-high carrier concentration approaching 10¹⁵ cm^-2. Our results evidence a large room temperature terahertz conductivity, which corresponds to 3X to 6X larger mobility than what is extracted from electrical measurements. That is, in spite of a relatively lower mobility, when taking into account its ultra-large carrier concentration, the 2DEG in complex oxide hetero-structures can still attain a large terahertz conductivity, which is comparable with that in traditional high-mobility semiconductors or large-area CVVD graphene films. Moreover, we also discuss the perspectives off these hetero-structures for terahertz and high frequency electronic applications.

Date Published: 26 September 2016
PDF: 5 pages
Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 99340N (26 September 2016); doi: 10.1117/12.2238026

Published in SPIE Proceedings Vol. 9934:
Terahertz Emitters, Receivers, and Applications VII
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada; Dimitris Pavlidis, Editor(s)