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Proceedings Paper

Radio frequency diodes and circuits fabricated via adhesion lithography (Conference Presentation)
Author(s): Dimitra G. Georgiadou; James Semple; Gwenhivir Wyatt-Moon; Thomas D. Anthopoulos

Paper Abstract

The commercial interest in Radio Frequency Identification (RFID) tags keeps growing, as new application sectors, spanning from healthcare to electronic article surveillance (EAS) and personal identification, are constantly emerging for these types of electronic devices. The increasing demand for the so-called “smart labels” necessitates their high throughput manufacturing, and indeed on thin flexible substrates, that will reduce the cost and render them competitive to the currently widely employed barcodes. Adhesion Lithography (a-Lith) is a novel patterning technique that allows the facile high yield fabrication of co-planar large aspect ratio (<100,000) metal electrodes separated by a sub-20 nm gap on large area substrates of any type. Deposition of high mobility semiconductors from their solution at low, compatible with plastic substrates, temperatures and application of specific processing protocols can dramatically improve the performance of the fabricated Schottky diodes. It will be shown that in this manner both organic and inorganic high speed diodes and rectifiers can be obtained, operating at frequencies much higher than the 13.56 MHz benchmark, currently employed in passive RFID tags and near filed communications (NFC). This showcases the universality of this method towards fabricating high speed p- and n-type diodes, irrespective of the substrate, simply based on the extreme downscaling of key device dimensions obtained in these nanoscale structures. The potential for scaling up this technique at low cost, combined with the significant performance optimisation and improved functionality that can be attained through intelligent material selection, render a-Lith unique within the field of plastic electronics.

Paper Details

Date Published: 7 November 2016
PDF: 1 pages
Proc. SPIE 9945, Printed Memory and Circuits II, 99450C (7 November 2016); doi: 10.1117/12.2237746
Show Author Affiliations
Dimitra G. Georgiadou, Imperial College London (United Kingdom)
James Semple, Imperial College London (United Kingdom)
Gwenhivir Wyatt-Moon, Imperial College London (United Kingdom)
Thomas D. Anthopoulos, Imperial College London (United Kingdom)

Published in SPIE Proceedings Vol. 9945:
Printed Memory and Circuits II
Emil J. W. List-Kratochvil, Editor(s)

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