
Proceedings Paper
Influence of hydrogen plasma irradiation on defects of ZnOFormat | Member Price | Non-Member Price |
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Paper Abstract
The influence of hydrogen-defect complexes on the properties of n-type ZnO has been studied in terms of annealing and
hydrogen plasma irradiation. Both of carrier concentration and Hall mobility increased after the annealing in Ar
atmosphere containing Zn (Zn-annealing). The improved electrical properties indicate that the zinc vacancy (VZn)
concentration was decreased by the Zn-annealing. While the Zn-annealed sample was not affected by hydrogen plasma
irradiation, carrier concentration and Hall mobility of the sample annealed in pure Ar atmosphere were increased by
hydrogen plasma irradiation. The simultaneous increases in carrier concentration and Hall mobility indicate that VZn,
which acts as a compensation acceptor, is passivated by hydrogen. The carrier concentration and Hall mobility after
hydrogen plasma irradiation decreased with increasing post-annealing temperature. It was found that VZn passivated by
hydrogen starts to dissociate at temperatures around 400°C. The activation energy for the dissociation of the VZn
passivated by hydrogen was estimated to be 2.2 eV.
Paper Details
Date Published: 19 September 2016
PDF: 6 pages
Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995704 (19 September 2016); doi: 10.1117/12.2237408
Published in SPIE Proceedings Vol. 9957:
Wide Bandgap Power Devices and Applications
Mohammad Matin; Abdul A. S. Awwal; Achyut K. Dutta, Editor(s)
PDF: 6 pages
Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995704 (19 September 2016); doi: 10.1117/12.2237408
Show Author Affiliations
Koji Abe, Nagoya Institute of Technology (Japan)
Hiroki Hata, Nagoya Institute of Technology (Japan)
Published in SPIE Proceedings Vol. 9957:
Wide Bandgap Power Devices and Applications
Mohammad Matin; Abdul A. S. Awwal; Achyut K. Dutta, Editor(s)
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