Share Email Print

Proceedings Paper

Characterization of nitrogen doped silicon-carbon multi-layer nanostructures obtained by TVA method
Author(s): Victor Ciupina; Eugeniu Vasile; Corneliu Porosnicu; Gabriel C. Prodan; Cristian P. Lungu; Rodica Vladoiu; Ionut Jepu; Aurelia Mandes; Virginia Dinca; Aureliana Caraiane; Virginia Nicolescu; Paul Dinca; Agripina Zaharia
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Ionized nitrogen doped Si-C multi-layer thin films used to increase the oxidation resistance of carbon have been obtained by Thermionic Vacuum Arc (TVA) method. The 100 nm thickness carbon thin films were deposed on silicon or glass substrates and then seven N doped Si-C successively layers on carbon were deposed. To characterize the microstructure, tribological and electrical properties of as prepared N-SiC multi-layer films, Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDXS), electrical and tribological techniques were achieved. Samples containing multi-layer N doped Si-C coating on carbon were investigated up to 1000°C. Oxidation protection is based on the reaction between SiC and elemental oxygen, resulting SiO2 and CO2, and also on the reaction involving N, O and Si-C, resulting silicon oxynitride (SiNxOy) with a continuously vary composition, and because nitrogen can acts as a trapping barrier for oxygen. The tribological properties of structures were studied using a tribometer with ball-on-disk configuration from CSM device with sapphire ball. The measurements show that the friction coefficient on the N-SiC is smaller than friction coefficient on uncoated carbon layer. Electrical conductivity at different temperatures was measured in constant current mode. The results confirm the fact that conductivity is greater when nitrogen content is greater. To justify the temperature dependence of conductivity we assume a thermally activated electrical transport mechanism.

Paper Details

Date Published: 26 September 2016
PDF: 10 pages
Proc. SPIE 9929, Nanostructured Thin Films IX, 992910 (26 September 2016); doi: 10.1117/12.2237156
Show Author Affiliations
Victor Ciupina, Univ. Ovidius Constanta (Romania)
Academy of Romanian Scientists (Romania)
Univ. of Bucharest (Romania)
Eugeniu Vasile, Univ. Politehnica of Bucharest (Romania)
Corneliu Porosnicu, National Institute for Laser, Plasma and Radiation Physics (Romania)
Gabriel C. Prodan, Univ. Ovidius Constanta (Romania)
Cristian P. Lungu, National Institute for Laser, Plasma and Radiation Physics (Romania)
Rodica Vladoiu, Univ. Ovidius Constanta (Romania)
Ionut Jepu, National Institute for Laser, Plasma and Radiation Physics (Romania)
Aurelia Mandes, Univ. Ovidius Constanta (Romania)
Virginia Dinca, Univ. Ovidius Constanta (Romania)
Aureliana Caraiane, Univ. Ovidius Constanta (Romania)
Virginia Nicolescu, CERONAV Constanta (Romania)
Paul Dinca, National Institute for Laser, Plasma and Radiation Physics (Romania)
Agripina Zaharia, Univ. Ovidius Constanta (Romania)

Published in SPIE Proceedings Vol. 9929:
Nanostructured Thin Films IX
Akhlesh Lakhtakia; Tom G. Mackay; Motofumi Suzuki, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?