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Proceedings Paper

InSb-based quantum dot nanostructures for mid-infrared photonic devices
Author(s): P. J. Carrington; E. Repiso; Q. Lu; H. Fujita; A. R. J. Marshall; Q. Zhuang; A. Krier
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Paper Abstract

Novel InSb quantum dot (QD) nanostructures grown by molecular beam epitaxy (MBE) are investigated in order to improve the performance of light sources and detectors for the technologically important mid-infrared (2-5 μm) spectral range. Unlike the InAs/GaAs system which has a similar lattice mismatch, the growth of InSb/InAs QDs by MBE is a challenging task due to Sb segregation and surfactant effects. These problems can be overcome by using an Sb-As exchange growth technique to realize uniform, dense arrays (dot density ~1012 cm-2) of extremely small (mean diameter ~2.5 nm) InSb submonolayer QDs in InAs. Light emitting diodes (LEDs) containing ten layers of InSb QDs exhibit bright electroluminescence peaking at 3.8 μm at room temperature. These devices show superior temperature quenching compared with bulk and quantum well (QW) LEDs due to a reduction in Auger recombination. We also report the growth of InSb QDs in InAs/AlAsSb ‘W’ QWs grown on GaSb substrates which are designed to increase the electron-hole (e-h) wavefunction overlap to ~75%. These samples exhibit very good structural quality and photoluminescence peaking near 3.0 μm at low temperatures.

Paper Details

Date Published: 16 September 2016
PDF: 6 pages
Proc. SPIE 9919, Nanophotonic Materials XIII, 99190C (16 September 2016); doi: 10.1117/12.2236869
Show Author Affiliations
P. J. Carrington, Lancaster Univ. (United Kingdom)
E. Repiso, Lancaster Univ. (United Kingdom)
Q. Lu, Lancaster Univ. (United Kingdom)
H. Fujita, Asahi Kasei Corp. (Japan)
A. R. J. Marshall, Lancaster Univ. (United Kingdom)
Q. Zhuang, Lancaster Univ. (United Kingdom)
A. Krier, Lancaster Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 9919:
Nanophotonic Materials XIII
Stefano Cabrini; Gilles Lérondel; Adam M. Schwartzberg; Taleb Mokari, Editor(s)

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