
Proceedings Paper
Hysteresis dependence on CH3NH3PbI3 deposition method in perovskite solar cellsFormat | Member Price | Non-Member Price |
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Paper Abstract
CH3NH3PbI3 perovskite solar cells are one of the most exciting technologies in the renewable energy field, resulting in over 20% power conversion efficiency. Deep understanding of the working principle is now required to turn the high efficiency solar cells into a reliable technology. In this work we have explored the role of deposition method on the crystallinity of perovskite films and its influence on the hysteresis behavior of the current-voltage characteristics. In addition Nb2O5 was used as hole blocking layer and its influence is also discussed. We have found that hysteresis is strongly dependent on both; perovskite deposition method and Nb2O5 thickness. The ideal condition where the hysteresis is suppressed or minimized was achieved by using the sequential deposition method for the perovskite semiconductor and a hole blocking layer of 50 nm.
Paper Details
Date Published: 23 September 2016
PDF: 9 pages
Proc. SPIE 9936, Thin Films for Solar and Energy Technology VIII, 99360B (23 September 2016); doi: 10.1117/12.2236855
Published in SPIE Proceedings Vol. 9936:
Thin Films for Solar and Energy Technology VIII
Michael J. Heben; Mowafak M. Al-Jassim, Editor(s)
PDF: 9 pages
Proc. SPIE 9936, Thin Films for Solar and Energy Technology VIII, 99360B (23 September 2016); doi: 10.1117/12.2236855
Show Author Affiliations
Silvia Leticia Fernandes, UNESP (Brazil)
POSMAT (Brazil)
Bruna Andressa Bregadiolli, POSMAT (Brazil)
Anna Christina Véron, EMPA (Switzerland)
POSMAT (Brazil)
Bruna Andressa Bregadiolli, POSMAT (Brazil)
Anna Christina Véron, EMPA (Switzerland)
Frank A. Nüesch, EMPA (Switzerland)
Maria Aparecida Zaghete, UNESP (Brazil)
Carlos Frederico de Oliveira Graeff, UNESP (Brazil)
Maria Aparecida Zaghete, UNESP (Brazil)
Carlos Frederico de Oliveira Graeff, UNESP (Brazil)
Published in SPIE Proceedings Vol. 9936:
Thin Films for Solar and Energy Technology VIII
Michael J. Heben; Mowafak M. Al-Jassim, Editor(s)
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