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Proceedings Paper

Ge/SiGe quantum well for photonic applications: modelling of the quantum confined Stark effect
Author(s): Giovanni Isella; Andrea Ballabio; Jacopo Frigerio
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Paper Abstract

Ge quantum wells are emerging as a relevant material system for enabling fast and power-efficient optical modulation in the framework of Si-photonics. The need for reliable designs of QW structures, matching given operating wavelengths and bias voltages, calls for the implementation of modelling tools capturing the optical properties of SiGe heterostructures. Here we report on the calculation of the quantum confined Stark effect based on an eight-band k×p model. The obtained spectra are analysed and compared with experimental data showing a good agreement between calculation and measurements.

Paper Details

Date Published: 13 May 2016
PDF: 6 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910G (13 May 2016); doi: 10.1117/12.2234982
Show Author Affiliations
Giovanni Isella, Politecnico di Milano (Italy)
Andrea Ballabio, Politecnico di Milano (Italy)
Jacopo Frigerio, Politecnico di Milano (Italy)

Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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