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Proceedings Paper

Next-generation performance of SAPHIRA HgCdTe APDs
Author(s): Dani E. Atkinson; Donald N. B. Hall; Ian M. Baker; Sean B. Goebel; Shane M. Jacobson; Charles Lockhart; Eric A. Warmbier
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Paper Abstract

We present the measured characteristics of the most recent iteration of SAPHIRA HgCdTe APD arrays, and with suppressed glow show them to be capable of a baseline dark current of 0:03e-/s. Under high bias voltages the device also reaches avalanche gains greater than 500. The application of a high temperature anneal during production shows great improvements to cosmetic performance and moves the SAPHIRA much closer to being science grade arrays. We also discuss investigations into photon counting and ongoing telescope deployments of the SAPHIRA with UH-IfA.

Paper Details

Date Published: 1 August 2016
PDF: 8 pages
Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150N (1 August 2016); doi: 10.1117/12.2234314
Show Author Affiliations
Dani E. Atkinson, Univ of Hawai'i (United States)
Donald N. B. Hall, Univ of Hawai'i (United States)
Ian M. Baker, Selex ES Ltd. (United Kingdom)
Sean B. Goebel, Univ. of Hawai'i (United States)
Shane M. Jacobson, Univ. of Hawai'i (United States)
Charles Lockhart, NASA IRTF (United States)
Eric A. Warmbier, NASA IRTF (United States)

Published in SPIE Proceedings Vol. 9915:
High Energy, Optical, and Infrared Detectors for Astronomy VII
Andrew D. Holland; James Beletic, Editor(s)

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