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Proceedings Paper

A single-atom spin-orbit qubit in Si (Conference Presentation)
Author(s): Dimitrie Culcer; Joseph Salfi; Sven Rogge

Paper Abstract

High-fidelity two-qubit entanglement operations pose new challenges for spin qubits. Although spin orbit-coupling (SOC) can simplify entanglement via electric fields and microwave photons, it exposes conventional spin qubits to electrical noise. Here we devise a gate-tunable single-acceptor spin-orbit qubit in silicon having a sweet spot where the electric dipole spin resonance (EDSR) is maximized, and the qubit is simultaneously insensitive to dephasing from low-frequency electrical noise. The sweet spot protects the qubit during rapid single-qubit EDSR and two-qubit dipole-dipole mediated operations, and is only obtained by treating SOC non-perturbatively. More than 10000 one-qubit and 1000 two-qubit operations are possible in the predicted relaxation time, as necessary for surface codes. Moreover, circuit quantum electrodynamics with single dopants is feasible in this scheme, including dispersive single-spin readout, cavity-mediated two-qubit entangement, and strong Jaynes-Cummings coupling. Our approach provides a scalable route for controlling electrical and photon-mediated interactions between spins of individual dopants in silicon.

Paper Details

Date Published: 4 November 2016
PDF: 1 pages
Proc. SPIE 9931, Spintronics IX, 99311K (4 November 2016); doi: 10.1117/12.2231059
Show Author Affiliations
Dimitrie Culcer, The Univ. of New South Wales (Australia)
Joseph Salfi, The Univ. of New South Wales (Australia)
Sven Rogge, The Univ. of New South Wales (Australia)

Published in SPIE Proceedings Vol. 9931:
Spintronics IX
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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