Share Email Print

Proceedings Paper

III-nitride monolithic LED covering full RGB color gamut
Author(s): Hussein S. El-Ghoroury; Chih-Li Chuang; Mikhail V. Kisin
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We present numerical simulation of III-nitride monolithic multi-color LED covering full red-green-blue (RGB) color gamut. The RGB LED structure was grown at Ostendo Technologies Inc. and has been used in Ostendo proprietary Quantum Photonic Imager (QPI) device. Active region of our RGB LED incorporates specially designed intermediate carrier blocking layers (ICBLs) controlling transport of each type of carriers and subsequent carrier injection redistribution among the optically active quantum wells (QWs) with different emission wavelengths. ICBLs are proved to be essential elements of multi-color LED active region design requiring optimization both in material composition and doping level. Strong interdependence between ICBL parameters and active QW characteristics presents additional challenge to multi-color LED design. Combination of several effects was crucial for adequate simulation of RGB LED color control features. Standard drift-diffusion transport model has been appended with rate equations for dynamic QW-confined carrier populations which appear severely off-balanced from corresponding mobile carrier subsystems. QW overshoot and Auger-assisted QW depopulation were also included into the carrier kinetic model thus enhancing the non-equilibrium character of QW confined populations and supporting the mobile carrier transport across the MQW active region. For device simulation we use COMSOL-based program suit developed at Ostendo Technologies Inc.

Paper Details

Date Published: 4 March 2016
PDF: 8 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974222 (4 March 2016); doi: 10.1117/12.2229281
Show Author Affiliations
Hussein S. El-Ghoroury, Ostendo Technologies, Inc. (United States)
Chih-Li Chuang, Ostendo Technologies, Inc. (United States)
Mikhail V. Kisin, Ostendo Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?