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Proceedings Paper

Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice
Author(s): Chuan Jin; Qingqing Xu; Chengzhang Yu; Jianxin Chen
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Paper Abstract

In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.

Paper Details

Date Published: 20 May 2016
PDF: 7 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190B (20 May 2016); doi: 10.1117/12.2229020
Show Author Affiliations
Chuan Jin, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Qingqing Xu, Shanghai Institute of Technical Physics (China)
Chengzhang Yu, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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