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Proceedings Paper

InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
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Paper Abstract

We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.

Paper Details

Date Published: 20 May 2016
PDF: 8 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 981909 (20 May 2016); doi: 10.1117/12.2228306
Show Author Affiliations
M. Razeghi, Northwestern Univ. (United States)
A. Haddadi, Northwestern Univ. (United States)
A. M. Hoang, Northwestern Univ. (United States)
R. Chevallier, Northwestern Univ. (United States)
S. Adhikary, Northwestern Univ. (United States)
A. Dehzangi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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