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Proceedings Paper

Analysis of optical responses of 1060nm seed laser diodes under overcurrent and short-pulse conditions for reliability investigations
Author(s): G. Le Galès; S. Joly; G. Pedroza; A. Morisset; F. Laruelle; L. Béchou
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Paper Abstract

New phenomena are observed in the optical response of InGaAs/AlGaAs 1060nm Laser Diodes (LDs) and Laser Diode Modules (LDMs) driven under high peak current condition: two segments of parasitic oscillations appear in the optical response of every tested LD and LDM, when increasing the current above two respective thresholds. In order to understand their origins and to discuss their influence over the operation range and reliability of seed LDs, we designed a test bench, based on an Electro-Optical Modulator, devoted to the time-spectral analysis of LD optical responses under such conditions. A correlation was found between the presence of the first segment of oscillations on the optical response and a temporal broadening of the LD spectrum. The presence of the second segment of oscillations is associated with a red-shift of the LD spectrum, but not with a significant spectral broadening, suggesting different causes for these phenomena. Step-stress ageing tests have then been carried out, in order to estimate the evolution of those parasitic oscillations over the lifetime of these LDs for reliability investigations.

Paper Details

Date Published: 28 April 2016
PDF: 11 pages
Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921Y (28 April 2016); doi: 10.1117/12.2227771
Show Author Affiliations
G. Le Galès, Lab. IMS, Univ. de Bordeaux, CNRS (France)
ALPhANOV (France)
S. Joly, Lab. IMS, Univ. de Bordeaux, CNRS (France)
G. Pedroza, ALPhANOV (France)
A. Morisset, ALPhANOV (France)
F. Laruelle, 3SP Technologies (France)
L. Béchou, Lab. IMS, Univ. de Bordeaux, CNRS (France)

Published in SPIE Proceedings Vol. 9892:
Semiconductor Lasers and Laser Dynamics VII
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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