We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

Date Published: 21 April 2016
PDF: 7 pages
Proc. SPIE 9884, Nanophotonics VI, 988435 (21 April 2016); doi: 10.1117/12.2227696

Published in SPIE Proceedings Vol. 9884:
Nanophotonics VI
David L. Andrews; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)