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Proceedings Paper

High frequency electro-optic measurement of strained silicon racetrack resonators
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Paper Abstract

In this paper, we report on time resolved electro-optic measurements in strained silicon resonators. Strain is induced by applying a mechanical deformation to the device. It is demonstrated that the linear electro-optic effect vanishes when the applied voltage modulation varies much faster than the free carrier lifetime, and that this occurs independently on the level of the applied stress. This demonstrates that, at frequencies which lie below the free carrier recombination rate, the electro-optic modulation is caused by plasma carrier dispersion. After normalizing out free carrier effects, it is found an upper limit of (8 ± 3) pm/V to the value of the strain induced χ(2)eff, zzz tensor component. This is an order of magnitude lower than the previously reported values for static electro-optic measurements.

Paper Details

Date Published: 13 May 2016
PDF: 8 pages
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910D (13 May 2016); doi: 10.1117/12.2227561
Show Author Affiliations
Massimo Borghi, Univ. degli Studi di Trento (Italy)
Mattia Mancinelli, Univ. degli Studi di Trento (Italy)
Florian Merget, RWTH Aachen Univ. (Germany)
Jeremy Witzens, RTWH Aachen Univ. (Germany)
Martino Bernard, Fondazione Bruno Kessler (Italy)
Mher Ghulinyan, Fondazione Bruno Kessler (Italy)
Georg Pucker, Fondazione Bruno Kessler (Italy)
Lorenzo Pavesi, Univ. degli Studi di Trento (Italy)

Published in SPIE Proceedings Vol. 9891:
Silicon Photonics and Photonic Integrated Circuits V
Laurent Vivien; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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