
Proceedings Paper
A new technique for ultrafast physical random number generation using optical chaosFormat | Member Price | Non-Member Price |
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Paper Abstract
In this paper, we numerically demonstrate a new extraction scheme for generating ultra-fast physically random sequence of bits. For this purpose, we utilize a dual-channel optical chaos source with suppressed time delayed (TD) signature in both the intensity and the phase of its two channels. The proposed technique uses M 1-bit analog-to-digital converters (ADCs) to compare the level of the chaotic intensity signal at time t with its levels after incommensurable delay-interval Tm, where m = {1,2, … , M}. The binary output of each 1-bit ADC is then sampled by a positive-edge-triggered D flip flop. The clock sequence applied to the flip-flops is relatively delayed such that the rising edge of the clock triggering the m flip-flop precedes the rising edge of the clock of a subsequent m+1 flip-flop by a fixed period. The outputs of all flip flops are then combined by means of a parity-check logic. Numerical simulations are carried out using values of parameters at which TD signature is suppressed for chosen values of setup parameters. The 15 statistical tests in Special Publication 800-22 from NIST are applied to the generated random bits in order to examine the randomness quality of these bits for different values of M. The results show that all tests are passed from M = 1 to M = 39 at sampling rate up to 34.5 GHz which indicates that the maximum generation rate of random bits is 2.691 Tb/sec using a chaotic source of single VCSEL and without employing any pre-processing techniques.
Paper Details
Date Published: 28 April 2016
PDF: 6 pages
Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921P (28 April 2016); doi: 10.1117/12.2227109
Published in SPIE Proceedings Vol. 9892:
Semiconductor Lasers and Laser Dynamics VII
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)
PDF: 6 pages
Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, 98921P (28 April 2016); doi: 10.1117/12.2227109
Show Author Affiliations
Amr Elsonbaty, Zewail City of Science and Technology (Egypt)
Mansoura Univ. (Egypt)
Salem F. Hegazy, Zewail City of Science and Technology (Egypt)
Cairo Univ. (Egypt)
Mansoura Univ. (Egypt)
Salem F. Hegazy, Zewail City of Science and Technology (Egypt)
Cairo Univ. (Egypt)
Salah S. A. Obayya, Zewail City of Science and Technology (Egypt)
Published in SPIE Proceedings Vol. 9892:
Semiconductor Lasers and Laser Dynamics VII
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)
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