
Proceedings Paper
Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applicationsFormat | Member Price | Non-Member Price |
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Paper Abstract
Cadmium Zinc Telluride (CZT) is an important compound semiconductor material upon which Mercury Cadmium
Telluride (MCT) layers are deposited epitaxially to form structures that are used in high performance detectors covering
a wide infrared (IR) spectral band. The epitaxial growth of high quality MCT layers presents many technical challenges
and a critical determinant of material performance is the quality of the underlying bulk CZT substrate. CZT itself is a
difficult material to manufacture where traditional methods of bulk growth are complex and low yielding, which
constrains the supply of commercially available substrates. In this work we report on the epitaxy-ready finishing of
Travelling Heather Method (THM) grown Cd0.96Zn0.04Te substrates. The THM method is well established for the growth
of high quality CZT crystals used in nuclear, X-ray and spectroscopic imaging applications and in this work we
demonstrate the application of this technique to the growth of IR specification CZT substrates with areas of up to 5 cm x
5 cm square. We will discuss the advantages of the THM method over alternative methods of bulk CZT growth where
the high yield and material uniformity advantages of this technique will be demonstrated. Chemo-mechanical polishing
(CMP) of 4 cm x 4 cm CZT substrates reveals that III-V (InSb/GaSb) like levels of epitaxy-ready surface finishing may
be obtained with modified process chemistries. Surface quality assessments will be made by various surface analytical
and microscopy techniques from which the suitability of the material for subsequent assessment of quality by epitaxial
growth will be ascertained.
Paper Details
Date Published: 20 May 2016
PDF: 8 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 981913 (20 May 2016); doi: 10.1117/12.2225796
Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)
PDF: 8 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 981913 (20 May 2016); doi: 10.1117/12.2225796
Show Author Affiliations
J. P. Flint, Galaxy Compound Semiconductors, Inc. (United States)
B. Martinez, Galaxy Compound Semiconductors Inc. (United States)
T. E. M. Betz, Galaxy Compound Semiconductors, Inc. (United States)
B. Martinez, Galaxy Compound Semiconductors Inc. (United States)
T. E. M. Betz, Galaxy Compound Semiconductors, Inc. (United States)
J. MacKenzie, Redlen Technologies Ltd. (Canada)
F. J. Kumar, Redlen Technologies Ltd. (Canada)
G. Bindley, Redlen Technologies Ltd. (Canada)
F. J. Kumar, Redlen Technologies Ltd. (Canada)
G. Bindley, Redlen Technologies Ltd. (Canada)
Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)
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