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Proceedings Paper

Computational process modeling and correction in a multi-patterning era
Author(s): Chris Spence
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Paper Abstract

Since the 28nm node, the resolution of ArFi lithography tools has been limited by the fixed Numerical Aperture of the scanners (1.35) at approximately 40-45 nm half-pitch. As a consequence, the shrink cadence identified by Moore’s law requires more complex patterning flows such as multiple Litho-Etch (LE) steps as well as spacer techniques (Self-Aligned Double Patterning (SADP)). To ensure yield it is necessary to optimize the total Edge Placement Error, a combination of Overlay, Global CDU, LCDU, OPC and other process and equipment errors.

In this presentation I will discuss some of the ways that these contributors can be measured, modeled and corrected as part of a Holistic Lithography methodology. Multiple-patterning techniques can be combined with EUV lithography to continue Moore’s law down to final pattern dimensions of 5-6 nm half pitch.

Paper Details

Date Published: 15 March 2016
PDF: 11 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 978005 (15 March 2016); doi: 10.1117/12.2225456
Show Author Affiliations
Chris Spence, ASML Brion (United States)

Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)

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