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Proceedings Paper

Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems
Author(s): Atia Shafique; Emre C. Durmaz; Barbaros Cetindogan; Melik Yazici; Mehmet Kaynak; Canan B. Kaynak; Yasar Gurbuz
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Paper Abstract

This paper presents the design, modelling and simulation results of silicon/silicon-germanium (Si/SiGe) multi-quantum well based bolometer detector for uncooled infrared imaging system. The microbolometer is designed to detect light in the long wave length infrared (LWIR) range from 8 to 14 μm with pixel size of 25 x 25 μm. The design optimization strategy leads to achieve the temperature coefficient of resistance (TCR) 4.5%/K with maximum germanium (Ge) concentration of 50%. The design of microbolometer entirely relies on standard CMOS and MEMS processes which makes it suitable candidate for commercial infrared imaging systems.

Paper Details

Date Published: 20 May 2016
PDF: 5 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191T (20 May 2016); doi: 10.1117/12.2224778
Show Author Affiliations
Atia Shafique, Sabanci Univ. (Turkey)
Emre C. Durmaz, Sabanci Univ. (Turkey)
Barbaros Cetindogan, Sabanci Univ. (Turkey)
Melik Yazici, Sabanci Univ. (Turkey)
Mehmet Kaynak, IHP-Microelectronics (Germany)
Canan B. Kaynak, IHP-Microelectronics (Germany)
Yasar Gurbuz, Sabanci Univ. (Turkey)

Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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