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Proceedings Paper

Low-cost fabrication of high efficiency solid-state neutron detectors
Author(s): Jia-Woei Wu; Kuan-Chih Huang; Adam Weltz; Erik English; Mona M. Hella; Rajendra Dahal; James J.-Q. Lu; Yaron Danon; Ishwara B. Bhat
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Paper Abstract

The development of high-efficiency solid state thermal neutron detectors at low cost is critical for a wide range of civilian and defense applications. The use of present neutron detector system for personal radiation detection is limited by the cost, size, weight and power requirements. Chip scale solid state neutron detectors based on silicon technology would provide significant benefits in terms of cost, volume, and allow for wafer level integration with charge preamplifiers and readout electronics. In this paper, anisotropic wet etching of (110) silicon wafers was used to replace deep reactive ion etching (DRIE) to produce microstructured neutron detectors with lower cost and compatibility with mass production. Deep trenches were etched by 30 wt% KOH at 85°C with a highest etch ratio of (110) to (111). A trench-microstructure thermal neutron detector described by the aforementioned processes was fabricated and characterized. The detector—which has a continuous p+-n junction diode—was filled with enriched boron (99% of 10B) as a neutron converter material. The device showed a leakage current of ~ 6.7 × 10-6 A/cm2 at -1V and thermal neutron detection efficiency of ~16.3%. The detector uses custom built charge pre-amplifier, a shaping amplifier, and an analogto- digital converter (ADC) for data acquisition.

Paper Details

Date Published: 12 May 2016
PDF: 8 pages
Proc. SPIE 9824, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XVII, 982414 (12 May 2016); doi: 10.1117/12.2224050
Show Author Affiliations
Jia-Woei Wu, Rensselaer Polytechnic Institute (United States)
Kuan-Chih Huang, Rensselaer Polytechnic Institute (United States)
Adam Weltz, Rensselaer Polytechnic Institute (United States)
Erik English, Rensselaer Polytechnic Institute (United States)
Mona M. Hella, Rensselaer Polytechnic Institute (United States)
Rajendra Dahal, Rensselaer Polytechnic Institute (United States)
James J.-Q. Lu, Rensselaer Polytechnic Institute (United States)
Yaron Danon, Rensselaer Polytechnic Institute (United States)
Ishwara B. Bhat, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 9824:
Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XVII
Augustus Way Fountain III, Editor(s)

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