Proceedings Paper
Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications| Format | Member Price | Non-Member Price |
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Paper Abstract
We present a new method to produce low-cost, high quality gallium antimonide (GaSb) substrates for IR imaging
applications. These methods apply high-volume wafer manufacturing standards from the silicon industry to increase
performance and value of our wafers. Encapsulant-free GaSb single crystals were grown using the modified Czochralski
method, yielding more than seventy 150mm wafers per crystal or several hundred 75mm or 100mm wafers per crystal.
These were processed into epi-ready substrates on which superlattice structures were grown. Wafer and epitaxy structure
characterization is also presented, including transmission X-ray topography, dopant level and uniformity.
Paper Details
Date Published: 20 May 2016
PDF: 11 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 981914 (20 May 2016); doi: 10.1117/12.2223998
Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)
PDF: 11 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 981914 (20 May 2016); doi: 10.1117/12.2223998
Show Author Affiliations
Nathan W. Gray, 5N Plus Inc. (United States)
Andrew Prax, 5N Plus Inc. (United States)
Daniel Johnson, 5N Plus Inc. (United States)
Andrew Prax, 5N Plus Inc. (United States)
Daniel Johnson, 5N Plus Inc. (United States)
Jonathan Demke, 5N Plus Inc. (United States)
Joseph G. Bolke, 5N Plus Inc. (United States)
W. Brock Alexander, 5N Plus Inc. (United States)
Joseph G. Bolke, 5N Plus Inc. (United States)
W. Brock Alexander, 5N Plus Inc. (United States)
Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)
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