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Proceedings Paper

Long wavelength infrared photodetector using submonolayer quantum dots
Author(s): Jun Oh Kim; Zahyun Ku; Augustine Urbas; Sang-Woo Kang; Sang Jun Lee
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Paper Abstract

We report on InAs SML QD infrared photodetector performance for long wavelength infrared detection. The device structure consists of InAs SML QDs embedded in InxGa1-xAs quantum well (QW) surrounded by GaAs and AlxGa1- xAs barrier. In order to investigate the structural properties of SML QDs, we took cross-sectional STEM images. We have measured the polarization dependent spectral response of SML-QD based photodetector using various angular inplane and out-plane polarizations. We also report a systematic approach for controlling the intersubband transition energy level in SML QD infrared photodetectors, in order to control the peak wavelength of the device.

Paper Details

Date Published: 20 May 2016
PDF: 6 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191B (20 May 2016); doi: 10.1117/12.2223569
Show Author Affiliations
Jun Oh Kim, Korea Research Institute of Standards and Science (Korea, Republic of)
Zahyun Ku, Air Force Research Lab. (United States)
Augustine Urbas, Air Force Research Lab. (United States)
Sang-Woo Kang, Korea Research Institute of Standards and Science (Korea, Republic of)
Sang Jun Lee, Korea Research Institute of Standards and Science (Korea, Republic of)

Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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