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Proceedings Paper

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell
Author(s): Negar Naghavi; Thibaud Hildebrandt; Muriel Bouttemy; Arnaud Etcheberry; Daniel Lincot
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Paper Abstract

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium’s adverse environmental impact and the narrow bandgap of CdS (2.4–2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50–100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300–500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Paper Details

Date Published: 27 February 2016
PDF: 7 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 97491I (27 February 2016); doi: 10.1117/12.2223151
Show Author Affiliations
Negar Naghavi, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Thibaud Hildebrandt, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Muriel Bouttemy, Lavoisier Institute of Versailles (ILV) (France)
Arnaud Etcheberry, Lavoisier Institute of Versailles (ILV) (France)
Daniel Lincot, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)

Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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