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Proceedings Paper

Bandgap engineering of graphene decorated with randomly distributed ZnO nano-seed
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Paper Abstract

In this paper, we have experimentally demonstrated the engineering of semi-metal single layer CVD Graphene’s bandgap by decorating with randomly distributed ZnO nano-seed grown by sonication of Zinc acetate dehydrate. The proximity of nanoparticles and Graphene breaks Graphene’s sublattice symmetry and opens-up a bandgap. The 2-D/G ratio of Raman spectroscopy of decorated Graphene along with a peak at 432.39 cm-1 confirmed presence of ZnO on single layer Graphene. The introduced bandgap was measured from the slope of Arrhenius plot. Graphene with significant bandgap introduced by the proposed methods could be used for devices intended for digital and logic applications.

Paper Details

Date Published: 25 May 2016
PDF: 5 pages
Proc. SPIE 9836, Micro- and Nanotechnology Sensors, Systems, and Applications VIII, 98362V (25 May 2016); doi: 10.1117/12.2222835
Show Author Affiliations
Chowdhury Al-Amin, Florida International Univ. (United States)
Phani Kiran Vabbina, Florida International Univ. (United States)
Mustafa Karabiyik, Florida International Univ. (United States)
Raju Sinha, Florida International Univ. (United States)
Nezih Pala, Florida International Univ. (United States)

Published in SPIE Proceedings Vol. 9836:
Micro- and Nanotechnology Sensors, Systems, and Applications VIII
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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