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Proceedings Paper

Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation
Author(s): Takayoshi Katase; Kenji Endo; Hiromichi Ohta
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Paper Abstract

Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

Paper Details

Date Published: 27 February 2016
PDF: 9 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974916 (27 February 2016); doi: 10.1117/12.2222255
Show Author Affiliations
Takayoshi Katase, Hokkaido Univ. (Japan)
Kenji Endo, Hokkaido Univ. (Japan)
Hiromichi Ohta, Hokkaido Univ. (Japan)

Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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