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Proceedings Paper

Edge roughness characterization of advanced patterning processes using power spectral density analysis (PSD)
Author(s): Shimon Levi; Ishai Schwarzband; Roman Kris; Ofer Adan; Elly Shi; Ying Zhang; Kevin Zhou
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Paper Abstract

Self-Aligned Quadruple Patterning (SAQP) is targeted to support the sub 10nm technology nodes. It is consisted of several process steps starting with lithography and Etch to define the pattern backbone. Followed by additional set of processes based on thin-films deposition and etch that quadruple the number of patterns, shrinking pattern and pitch sizes.

Pattern roughness is derived from the physical and chemical characteristics of these process steps. It is changing with each of the SAQP process steps, based on material stack and the etch process characteristics. Relative to a sub 10 nm pattern sizes pattern, edge roughness can significantly impact pattern physical dimensions. Unless controlled it can increase the variability of device electrical performance, and reduce yield.

In this paper we present the SAQP process steps and roughness characterization, performed with Power Spectral Density (PSD) methodology. Experimental results demonstrates the ability of PSD analysis to sensitively reflect detailed characterization of process roughness, guiding process development improvements, and enabling roughness monitoring for production.

Paper Details

Date Published: 28 March 2016
PDF: 9 pages
Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820I (28 March 2016); doi: 10.1117/12.2220814
Show Author Affiliations
Shimon Levi, Applied Materials, Ltd. (Israel)
Ishai Schwarzband, Applied Materials, Ltd. (Israel)
Roman Kris, Applied Materials, Ltd. (Israel)
Ofer Adan, Applied Materials, Ltd. (Israel)
Elly Shi, Applied Materials, Inc. (United States)
Ying Zhang, Applied Materials, Inc. (United States)
Kevin Zhou, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 9782:
Advanced Etch Technology for Nanopatterning V
Qinghuang Lin; Sebastian U. Engelmann, Editor(s)

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