Share Email Print

Proceedings Paper

Optical metrology solutions for 10nm films process control challenges
Author(s): Sridhar Mahendrakar; Alok Vaid; Kartik Venkataraman; Michael Lenahan; Steven Seipp; Fang Fang; Shweta Saxena; Dawei Hu; Nam Hee Yoon; Da Song; Janay Camp; Zhou Ren
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets requirements, especially at 10nm node due to the 3-d geometry of devices and tight process budget. It has become necessary to measure and control each layer in the gate stack before and after dielectric and metal gate deposition sequences. A typical gate stack can have 5-7 layers including the interfacial layer, high-k dielectric, metal gate stack, work function layers, and cap layers. Similarly, PMOS channel strain is controlled using a graded SixGe1-x stack grown epitaxially over fins in the source/drain regions. This graded stack can have 2-4 layers of different thicknesses and Ge concentrations. This paper discusses the benefit of using spectroscopic ellipsometry with multiple angles of incidence to accurately and precisely determine the thickness of individual layers in critical gate layer stacks at various process steps on planar and grating surfaces. We will also show the benefit of using an advanced laser-based ellipsometer, for ultra-precise measurement of the gate interfacial layer oxides.

Paper Details

Date Published: 18 March 2016
PDF: 14 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780Z (18 March 2016); doi: 10.1117/12.2220462
Show Author Affiliations
Sridhar Mahendrakar, GLOBALFOUNDRIES (United States)
Alok Vaid, GLOBALFOUNDRIES (United States)
Kartik Venkataraman, KLA-Tencor Corp. (United States)
Michael Lenahan, GLOBALFOUNDRIES (United States)
Steven Seipp, GLOBALFOUNDRIES (United States)
Fang Fang, GLOBALFOUNDRIES (United States)
Shweta Saxena, GLOBALFOUNDRIES (United States)
Dawei Hu, KLA-Tencor Corp. (United States)
Nam Hee Yoon, KLA-Tencor Corp. (United States)
Da Song, KLA-Tencor Corp. (United States)
Janay Camp, KLA-Tencor Corp. (United States)
Zhou Ren, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?