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Proceedings Paper

Material analysis techniques used to drive down in-situ mask contamination sources
Author(s): Harm Dillen; Gerard Rebel; Jennifer Massier; Dominika Grodzinka; Richard J. Bruls
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Paper Abstract

Using SEM-EDS analysis on small (< 200 nm) particles is challenging, especially on a substrate with multiple background elements present. We will show a methodology combining three techniques to get the most information out of small particles. This method combines low energy EDS with a nontraditional approach to improve statistics in EDS and elemental mapping. This methodology is required for ASML’s EUV platform, the NXE scanner to continue system improvement for a system showing already low defect count. The poor particle statistics on particle defects lead to a limited amount of particles available for diagnostics, which implies that all information on particle characteristics should be used for diagnostics.

Paper Details

Date Published: 25 March 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781N (25 March 2016); doi: 10.1117/12.2220400
Show Author Affiliations
Harm Dillen, ASML Netherlands B.V. (Netherlands)
Gerard Rebel, ASML Netherlands B.V. (Netherlands)
Jennifer Massier, ASML Netherlands B.V. (Netherlands)
Dominika Grodzinka, ASML Netherlands B.V. (Netherlands)
Richard J. Bruls, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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