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Proceedings Paper

Contrast optimization for 0.33NA EUV lithography
Author(s): Jo Finders; Sander Wuister; Thorsten Last; Gijsbert Rispens; Eleni Psari; Jan Lubkoll; Eelco van Setten; Friso Wittebrood
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Paper Abstract

0.33 NA EUV lithography is expected to be introduced into High Volume Manufacturing at k1 values of approximately 0.4...0.5. This is significantly larger than state of the art immersion lithography which can operate at k1 of 0.3. We investigated the impact of contrast enhancement on the imaging properties of Contact Holes and Lines and Spaces. Contrast was adjusted by changing the illumination properties pupil fill ratio and center incidence angle. We found a strong improvement of the local Critical Dimension control: line width variation for Lines and Spaces and hole to hole CD variations for arrays of contact holes. For all features we found a similar dependency on contrast. As the local Critical Dimension variations contribute significant to Edge Placement Error budgets, we foresee the implementation of contrast enhancements already at moderate k1 values around 0.4.

Paper Details

Date Published: 26 April 2016
PDF: 9 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761P (26 April 2016); doi: 10.1117/12.2220036
Show Author Affiliations
Jo Finders, ASML Netherlands B.V. (Netherlands)
Sander Wuister, ASML Netherlands B.V. (Netherlands)
Thorsten Last, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Eleni Psari, ASML Netherlands B.V. (Netherlands)
Jan Lubkoll, ASML Netherlands B.V. (Netherlands)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Friso Wittebrood, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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